RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAT86
SILICON PLANAR SCHOTTKY
BARRIER DIODE
FEATURES
* Fast Switching Device(T
RR
<4.0nS)
* DO-34 Package (JEDEC)
* Through-Hole Device Type Mounting
* Hermetically Sealed Glass
* Compression Bonded Construction
* All external surfaces are corrosion resistant and leads
are readily solderable
.022 (0.56)
DIA.
.018 (0.46)
1.02 (26.0)
MIN.
DO-34
.165 (4.2)
MAX.
.079 (2.0)
MAX.
1.02 (26.0)
MIN.
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25
o
C unless otherwise noted )
RATINGS
Maximum Forward Comtinuous Reverse Voltage
Maximum Forward Comtinuous Current @ T A =25 C
Repetitive Peak Forward Current tp<1s:δ<0.5
Surge Forward Current @ tp<10ms
Junction Temperature
Storage Temperature Range
o
O
SYMBOL
V
R
I
F
I
FRM
I
FSM
T
J
T
STG
BAT86
50
200
500
5
125
-65 to + 150
UNITS
V
mAmps
AmpsR
mAmps
O
C
C
O
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Reverse breakdown voltage (I
R
=10µA)
Reverse voltage leakage current (V
R
=40V)
(I
F
=0.1mA)
(I
F
=1mA)
Forward voltage Pulse Tesx tp<300µs,δ<2%
(I
F
=10mA)
(I
F
=30mA)
(I
F
=100mA)
Diode capacitance (V
R
=1,f=1MHz)
Reveres recovery time (I
F
=I
R
=10mA,RL=100Ω,IR=1mA)
C
D
-
-
V
F
-
SYMBOL
V
(BR)R
I
R
MIN.
50
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
5.0
0.30
0.38
0.45
0.60
0.90
8.0
4.0
pF
nS
2006-3
V
UNITS
V
µA
t
rr
RECTRON [ RECTRON SEMICONDUCTOR ]
