RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAV99
SMALL SIGNAL DIODE
FEATURES
* Silicon epitaxial planar diode
* Fast switching
* Surface mounting device
SOT-23
.040 (1.02)
.035 (0.88)
.017 (0.42)
.015 (0.38)
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.110 (2.80)
.079 (2.00)
.118 (3.00)
(C)
(A)
(B)
* Weight : apporx. 0.008g
.071 (1.80)
(C)
(A)
.055 (1.40)
.047 (1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.045 (1.15)
.033 (0.85)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
A
=25
o
C
Repetitive Peak Forward Current at T
A
=25
o
C
Surge Forward Current at tp < 1 S, at T
A
=25
o
C
Total Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
I
F
I
FRM
I
FSM
P
D
T
J
T
STG
BAV99
70
150
500
1000
250
125
-65 to + 150
UNITS
Volts
mA
mA
mA
mW
0
o
.006 (0.14)
.003 (0.08)
.102 (2.60)
.094 (2.40)
R0.05
(.002)
.028 (0.70)
.020 (0.50)
C
C
0
2001-12
RECTRON [ RECTRON SEMICONDUCTOR ]
