BC556
TECHNICAL SPECIFICATION
PNP Planar Epitaxial Transistor
TO-92
DIM
A
B
C
D
E
F
G
H
MIN
4.32
4.45
3.18
0.41
0.35
5
q
1.14
1.14
12.70
MAX
5.33
5.2
4.19
0.50
0.50
5
q
1.40
1.53
-
1.COLLECTOR
2.BASE
3. EMITTER
K
Absolute Maximun Ratings (Ta=25
o
C)
Symbol
Collector-Emmiter Voltage
Collector-Emmitor Voltage
Collector Base Voltage
Emitter Base Voltage
Collector current Continuous
Peak
Base Current - Peak
Emitter Current - Peak
Collector Power Dissapation Ta = 25 °C
Operating and Storage Junction
THERMAL RESISTANCE
Junction to ambient
R
th(j-a)
-
250
°C / W
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
CM
I
BM
I
E M
P
TA
T
j
T
stg
-
-
-
-
-
-
-
-
-
-
-
Ratings
65
80
80
5
100
200
200
200
500
(-55 to +150)
Unit
V
V
V
V
mA
mA
mA
mA
mW
°C
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