BC856
BC857
BC858
PNP Silicon Planar Epitaxial Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings
(Ta = 25
o
C unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emmitter Voltage (+V
BE
= 1V)
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - Peak
Total power dissipation up to
T
amb
= 60
o
C
Storge Temperature
Junction Temperature
Thermal Resistance
From junction to tab
From tab to soldering points
From soldering points to ambient
SYMBOL
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
EM
I
BM
P
tot
**
Tstg
Tj
R
th(j-t)
R
th(t-s)
R
th(s-a)
**
BC856
80
80
65
BC857
50
50
45
5
100
200
200
200
250
-55 to +150
150
60
280
90
K/W
BC858
30
30
30
UNITS
V
V
V
V
mA
mA
mA
mW
o
o
C
C
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
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