BCW30
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
P
CM
:
0.225 W (Tamb=25
O
C)
* Collector current
I
CM
:
-0.1
A
* Collector-base voltage
V
(BR)CBO
: -32
V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to +150
O
C
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= -10mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= -2mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= -10mA, I
C
=0)
Collector cut-off current (V
CB
= -32V, I
E
=0)
Collector cut-off current (V
CE
= -30V, I
B
=0)
Collector cut-off current (V
EB
= -5V, I
C
=0)
DC current gain (V
CE
= -5V, I
C
= -2mA)
Collector-emitter saturation voltage (I
C
= -10mA, I
B
= -0.5mA)
Base-emitter voltage (I
C
= -2mA, V
CE
= -5V)
CLASSIFICATION OF h
FE
RANK
Range
Marking
Note ; “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
L
215-350
C2X
2007-3
H
350-500
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
MIN
-32
-32
-5
-
-
-
215
-
-
TYP
-
-
-
-
-
-
-
-
-
MAX
-
-
-
-0.1
-0.1
-0.1
500
-0.3
-0.75
UNITS
V
V
V
mA
mA
mA
-
V
V
RECTRON [ RECTRON SEMICONDUCTOR ]
