TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
RECTRON
BCW61C
FEATURES
* Power dissipation
P
CM
:
0.25
W (Tamb =25
O
C)
SOT-23
MECHANICAL DATA
*
*
*
*
*
COLLECTOR
3
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
BASE
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase , half wave, 60H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
( @ TA = 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
Total device dissipation
Junction and storage temperature
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= -10mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= -1mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= -10mA, I
C
=0)
Collector cut-off current (V
CB
= -32V, I
E
=0)
Collector cut-off current (V
EB
= -4V, I
E
=0)
DC current gain (V
CE
= -5V, I
C
= -10mA)
DC current gain (V
CE
= -5V, I
C
= -2mA)
DC current gain (V
CE
= -1V, I
C
= -50mA)
Collector-emitter saturation voltage (I
C
= -10mA, I
B
= -0.25mA)
Collector-emitter saturation voltage (I
C
= -50mA, I
B
= -1.25mA)
Base-emitter saturation voltage (I
C
= -10mA, I
B
= -0.25mA)
Base-emitter saturation voltage (I
C
= -50mA, I
B
= -1.25mA)
Base-emitter voltage (V
CE
= -5V, I
C
= -10mA)
Base-emitter voltage (V
CE
= -5V, I
C
= -2mA)
Base-emitter voltage (V
CE
= -1V, I
C
= -50mA)
Transition frequency (V
CE
= -5V, I
C
= -10mA, f=100MH
Z
)
Collector capacitance (V
CB
= -10V, I
E
= 0, f=1MH
Z
)
Emitter capacitance (V
EB
= -0.5V, I
C
= 0, f=1MH
Z
)
Marking
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
f
T
Cc
Ce
V
BE(ON)
V
CE(sat)
V
BE(sat)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
,T
stg
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
MIN
-32
-32
-5
-
-
40
250
100
-0.06
-0.12
-0.6
-0.68
-
-0.6
-
100
-
-
BC
2006-3
VALUE
-32
-32
-5
-0.1
0.25
-55 - 150
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-0.55
-
-0.72
-
4.5
11
MAX
-
-
-
-0.02
-0.02
-
460
-
-0.25
-0.55
-0.85
-1.05
-
-0.75
-
-
-
-
UNITS
V
V
V
A
W
oC
UNITS
V
V
V
mA
mA
-
-
-
V
V
V
V
V
V
V
MH
Z
pF
pF
ELECTRICAL CHARACTERISTICS
( @ TA = 25
o
C unless otherwise noted )
RECTRON [ RECTRON SEMICONDUCTOR ]
