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BCW68H 参数 Datasheet PDF下载

BCW68H图片预览
型号: BCW68H
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 23双极晶体管晶体管( PNP ) [SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 2 页 / 296 K
品牌: RECTRON [ RECTRON SEMICONDUCTOR ]
 浏览型号BCW68H的Datasheet PDF文件第2页  
TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
RECTRON
BCW68H
* Power dissipation
P
CM
:
0.33
W(Tamb=25
O
C)
* Collector current
I
CM
:
-0.8
A
* Collector-base voltage
V
(BR)CBO
: -60
V
* Operating and storage junction temperature range
T
J
,T
stg
: -55
O
C to+150
O
C
FEATURES
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
BASE
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase , half wave, 60H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ TA = 25
O
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= -10mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= -10mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= -10mA, I
C
=0)
Collector cut-off current (V
CB
= -45V, I
E
=0)
Collector cut-off current (V
EB
= -4V, I
C
=0)
DC current gain (V
CE
= -10V, I
C
= -0.1mA)
DC current gain (V
CE
= -1V, I
C
= -10mA)
DC current gain (V
CE
= -1V, I
C
= -100mA)
DC current gain (V
CE
= -2V, I
C
= -500mA)
Collector-emitter saturation voltage(I
C
= -100mA, I
B
= -10mA)
Collector-emitter saturation voltage(I
C
= -500mA, I
B
= -50mA)
Base - emitter saturation voltage (I
C
= -100mA, I
B
= -10mA)
Base - emitter saturation voltage (I
C
= -500mA, I
B
= -50mA)
Transition frequency (V
CE
= -10V, I
C
= -20mA, f=100MH
Z
)
Output capacitance (V
CB
= -10V, I
E
= 0, f=1MH
Z
)
Input capacitance (V
EB
= -0.5V, I
E
= 0, f=1MH
Z
)
Noise figure (V
CE
= -5V, I
E
= -0.2mA, f=1kHz,
Df=200Hz,
RG=1KW)
Marking
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
V
CE(sat)
h
FE
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
MIN
-60
-45
-5
-
-
80
180
250
100
-
-
-
-
100
-
-
-
DH
2006-3
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
-0.02
-0.02
-
-
630
-
-0.3
-0.7
-1.25
-2
-
18
80
10
UNITS
V
V
V
mA
mA
-
-
-
-
V
V
V
V
MHz
PF
PF
dB
V
BE(sat)
f
T
Cob
Cib
NF