C945
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
P
CM
:
0.2
* Collector current
I
CM
:
0.15
* Collector-base voltage
V
(BR)CBO
:
60
* Operating and storage junction
T
J
,T
stg
: -55
O
C to +150
O
C
W (Tamb=25
O
C)
A
V
temperature range
COLLECTOR
3
SOT-23
MECHANICAL DATA
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage(I
C
= 1mA, I
E
=0)
Collector-emitter breakdown voltage(I
C
= 0.1mA, I
B
=0)
Emitter-base breakdown voltage(I
C
= 0.1mA, I
B
=0)
Collector cut-off current(V
CB
= 60V, I
E
=0)
Collector cut-off current(V
CB
= 45V, I
E
=0)
Emitter cut-off current(V
EB
= 5V, I
C
=0)
DC current gain(V
CE
= 6V, I
C
= 1mA)
DC current gain(V
CE
= 6V, I
C
= 0.1mA)
Collector-emitter saturation voltage(I
C
=100 mA, I
B
= 10mA)
Base-emitter saturation voltage(I
C
= 100 mA, I
B
= 10mA)
Base-emitter voltage(I
E
= 310 mA)
Transition frequency(V
CE
= 6V, I
C
= 10mA, f= 30MH
Z
)
CLASSIFICATION OF hFE
(1)
RANK
Range
Marking
Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)".
L
130~200
CR
2007-3
H
200~400
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BEF
f
T
MIN
60
50
5
-
-
-
130
40
-
-
-
150
TYP
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
0.1
0.1
0.1
400
-
0.3
1
1.4
-
UNITS
V
V
V
mA
mA
mA
-
-
V
V
V
MH
Z
RECTRON [ RECTRON SEMICONDUCTOR ]
