SEMICONDUCTOR
RECTRON
TECHNICAL SPECIFICATION
CMPSH-3
SOT-23 PLASTIC-ENCAPSULATE
SCHOTTKY DIODE
FEATURES
* Power dissipation
P
D
:
350
mW (Tamb=25
O
C)
* Forward current
I
F
:
100
mA
* Reverse voltage
V
R
:
30
V
* Operating and storage junction temperature range
T
J
,T
stg
: -55
O
C to +150
O
C
SOT-23
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
0.019(2.00)
0.071(1.80)
1
3
0.110(2.80)
2
0.118(3.00)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Reverse Breakdown Voltage (I
R
=100mA)
Reverse voltage leakage current (V
R
=25V)
Reverse voltage leakage current (V
R
=25V, T
A
= 100 C)
Forward voltage (I
F
=2mA)
Forward voltage (I
F
=15mA)
Forward voltage (I
F
=100mA)
Diode capacitance (V
R
=0V, f=1MHz)
Reverse recovery time (I
F
=I
R
=10mA, I
RR
=1.0mA, R
L
=100W)
C
tot
trr
V
F
o
SYMBOL
V
(BR)
I
R
MIN
30
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
MAX
-
500
100
0.33
0.45
1
8
5
UNITS
V
nA
mA
V
V
V
pF
ns
Marking
Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
D95
2006-3
RECTRON [ RECTRON SEMICONDUCTOR ]
