RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
DB101
THRU
DB107
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
*
Good for automation insertion
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 1.0 gram
DB-1
FEATURES
* Epoxy : UL flammability classification 94V-0
* UL listed under the recognized component directory, file #E94233.
.255 (6.5)
.245 (6.2)
.350 (8.9)
.300 (7.6)
.335 (8.51)
.320 (8.12)
.135 (3.4)
.115 (2.9)
.165 (4.2)
.155 (3.9)
.060
(1.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
.020
(0.5)
.205 (5.2)
.195 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
I
FSM
T
J,
T
STG
50
-65 to + 150
Amps
0
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
DB101
50
35
50
DB102
100
70
100
DB103
200
140
200
DB104
400
280
400
1.0
DB105
600
420
600
DB106
800
560
800
DB107
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Forward Voltage Drop per Bridge
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 125 C
o
SYMBOL
V
F
DB101
DB102
DB103
DB104
1.1
10.0
0.5
DB105
DB106
DB107
UNITS
Volts
uAmps
mAmps
1998-8
I
R