RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
DB101S
THRU
DB107S
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 1.0 gram
DB-S
.310 (7.9)
.290 (7.4)
.255 (6.5)
.245 (6.2)
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
* UL listed the recognized component directory, file #E94233
.042 (1.1)
.038 (1.0)
.013 (.330)
.003 (.076)
.410 (10.4)
.360 (9.4)
.009
(9.4)
.060 (1.524)
.040 (1.016)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.335 (8.51)
.320 (8.13)
.135 (3.4)
.115 (2.9)
.205 (5.2)
.195 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
I
FSM
T
J,
T
STG
50
-55 to + 150
Amps
0
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
NOTE: Suffix “-s” Surface Mount for Dip Bridge.
@T
A
= 25
o
C
@T
A
= 125 C
o
SYMBOL
V
F
DB101S DB102S DB103S DB104S DB105S DB106S DB107S UNITS
1.1
5.0
0.5
Volts
uAmps
mAmps
2001-4
I
R
RECTRON [ RECTRON SEMICONDUCTOR ]
