DTC114TUA
SOT-323 DIGITAL TRANSISTOR
TRANSISTORS(NPN)
FEATURES
* Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
* The bias resistors consist of thin-film resistors with co-
mplete isolation to without connecting extemal input.
They also have the advantage of almost completely eli-
minating parasitic effects.
* Only the on/off conditions need to be set for operation mark-
ing device design easy.
SOT-323
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.006 gram
0.053(1.35)
0.045(1.15)
0.006(0.15)
0.003(0.08)
REF 0.021(0.53)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.016(0.40)
0.008(0.20)
0.096(2.45)
0.085(2.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
(2)
(1)
(1) Base
(2) Emitter
(3) Collector
O
0.055(1.40)
0.047(1.20)
1
3
2
0.087(2.20)
0.079(2.00)
(3)
MAXIMUM RATINGES
( @ T
A
= 25
o
C unless otherwise noted )
RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Junction Temperature
Junction and storage Temperature
Dimensions in inches and (millimeters)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
TJ , Tstg
VALUE
50
50
5
100
200
150
-55 to +150
UNITS
V
V
V
mA
mW
o
o
C
C
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 50mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 1mA, I
B
=0)
Emitter-base breakdown voltage (I
E
= 50mA, I
C
=0)
Collector cut-off current (V
CB
= 50V, I
E
=0)
Emitter cut-off current (V
EB
= 4V, I
C
=0)
DC current gain (V
CE
= 5V, I
C
= 1mA)
Collector-emitter saturation voltage (I
C
= 10mA, I
B
= 1mA)
Transition frequency (V
CE
= 10V, I
E
= -5mA, f=100MHz)
Input resistor
NOTE: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
MIN.
50
50
5
-
-
100
-
-
7
TYP.
-
-
-
-
-
300
-
250
10
MAX.
-
-
-
0.5
0.5
600
0.3
-
13
UNITS
V
V
V
mA
mA
-
V
MHz
KW
2006-3
R
1
RECTRON [ RECTRON SEMICONDUCTOR ]
