TECHNICAL SPECIFICATION
SEMICONDUCTOR
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
RECTRON
FMMT491
* Power dissipation
P
CM
:
0.5
W (Tamb=25
O
C)
* Collector current
I
CM
:
1
A
* Collector-base voltage
V
(BR)CBO
:
80
V
* Operating and storage junction temperature range
T
J
,T
stg
: -55
O
C to +150
O
C
COLLECTOR
FEATURES
SOT-23
3
MECHANICAL DATA
*
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
Marking: 491
BASE
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase , half wave, 60H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
O
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 100mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 10mA, I
B
=0) (Note 1)
Emitter-base breakdown voltage (I
E
= 100mA, I
C
=0)
Collector cut-off current (V
CB
= 60V, I
E
=0)
Emitter cut-off current (V
EB
= 4V, I
C
=0)
DC current gain (V
CE
= 5V, I
C
= 1mA)
DC current gain (V
CE
= 5V, I
C
= 500mA) (Note 1)
DC current gain (V
CE
= 5V, I
C
= 1A) (Note 1)
DC current gain (V
CE
= 5V, I
C
= 2A) (Note 1)
Collector-emitter saturation voltage (I
C
= 500mA, I
B
= 50mA) (Note 1)
Collector-emitter saturation voltage (I
C
= 1A, I
B
= 100mA) (Note 1)
Base-emitter saturation voltage (I
C
= 1A, I
B
= 100mA) (Note 1)
Base-emitter voltage ((V
CE
= 5V, I
C
= 1A) (Note 1)
Transition frequency (V
CE
= 10V, I
C
= 50mA, f=100MH
Z
)
Collector output capactitance (V
CB
= 10V, f=1MH
Z
)
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
V
BE
f
T
Cob
MIN
80
60
5
-
-
100
100
80
30
-
-
-
-
150
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
0.1
0.1
-
300
-
-
0.25
0.5
1.1
1
-
10
UNITS
V
V
V
mA
mA
-
-
-
-
V
V
V
V
MH
Z
pF
2006-3
Notes 1: Measured under pulsed conditions, Pulse width=300ms, Duty cycle < 2%.
2: "Fully ROHS compliant", "100% Sn plating (Pb-free)".
RECTRON [ RECTRON SEMICONDUCTOR ]
