MMBTA06
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
P
CM
:
0.3
W(Tamb=25
O
C)
* Collector current
I
CM
:
0.5
A
* Collector-base voltage
V
(BR)CBO
:
80
V
* Operating and storage junction temperature range
T
J
,T
stg
:
-55
O
C to +150
O
C
COLLECTOR
3
SOT-23
*
*
*
*
*
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Collector - Base Breakdown Voltage (I
C
=100 uA, I
E
=0)
Collector - Emitter Breakdown Voltage(I
C
= 1mA, I
B
=0)
Emitter - Base Breakdown Voltage (I
E
= 100 uA, I
C
= 0)
Collector Cut - Off Current (V
CB
= 80V, I
E
=0)
Collector Cut - Off Current (V
CE
= 60V, I
B
=0)
Collector Cut - Off Current (V
EB
= 3V, I
C
=0)
DC Current Gain(V
CE
= 1V, I
C
= 100mA)
Collector - Emitter Saturation Voltage(I
C
= 100 mA, I
B
= 10mA)
Base - Emitter Saturation Voltage(I
C
=100mA, I
B
= 10mA)
Transition Frequency(V
CE
= 2V, I
C
= 10mA, f =100MHz)
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
MIN
80
80
4
-
-
-
100
-
-
100
TYP
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
0.1
0.1
0.1
200
0.25
1.2
-
UNITS
V
V
V
uA
uA
uA
-
V
V
MHz
o
f
T
Marking
Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
1GM
2007-3
RECTRON [ RECTRON SEMICONDUCTOR ]
