欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SA1121 参数 Datasheet PDF下载

2SA1121图片预览
型号: 2SA1121
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延 [Silicon PNP Epitaxial]
分类和应用: 光电二极管
文件页数/大小: 5 页 / 65 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号2SA1121的Datasheet PDF文件第1页浏览型号2SA1121的Datasheet PDF文件第2页浏览型号2SA1121的Datasheet PDF文件第4页浏览型号2SA1121的Datasheet PDF文件第5页  
2SA1121
Main Characteristics
Maximum Collector Dissipation Curve
Collector power dissipation Pc (mW)
150
–100
Typical Output Characteristics (1)
–1.
0
–0.9
–0.8
Collector Current I
C
(mA)
–80
–0.7
–0.6
100
–60
–0.5
–40
–0.4
–0.3
50
–20
–0.2
–0.1 mA
I
B
= 0
0
50
100
150
0
–2
–4
–6
–8
–10
Ambient Temperature Ta (°C)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics (2)
–500
Typical Transfer Characteristics
–30
Collector Current I
C
(mA)
–400
–300
–200
–2
–1 mA
–1.0
–100
I
B
= 0
0
–2
–4
–6
–8
–10
–0.3
0
–0.2 –0.4 –0.6 –0.8 –1.0
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
Gain Bandwidth Product f
T
(MHz)
150
Base to Emitter Voltage V
BE
(V)
Gain Bandwidth Product vs.
Collector Current
240
200
160
120
80
40
0
–5
V
CE
= –3 V
DC Current Transfer ratio h
FE
V
CE
= –3 V
75
100
50
25
C
25
°
=–
0
50
Ta
0
–2
–5 –10 –20
–50 –100 –200
–500
–10
–20
25
–25
–3
Ta = 75
°
C
–7
–6
–5
–4
–3
Collector Current I
C
(mA)
V
CE
= –3 V
–10
–50 –100 –200
–500
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Rev.2.00 Aug 10, 2005 page 3 of 4