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2SK1305 参数 Datasheet PDF下载

2SK1305图片预览
型号: 2SK1305
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用: 晶体晶体管功率场效应晶体管局域网
文件页数/大小: 7 页 / 82 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1305
Main Characteristics
Power vs. Temperature Derating
30
100
30
10
3
1.0
0.3
0.1
0
50
100
150
1
3
10
30
100
300
1,000
ea
Ar
is
(on)
th
S
in R
D
on d by
ti
ra te
pe imi
O L
is
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
Drain Current I
D
(A)
µ
s
0
10
20
µ
s
PW
1
D
C
(1
s
m
ms
=
O
pe
ra
t
io
n
10
)
ot
sh
10
(T
C
=
Ta = 25°C
25
°
C
)
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
Typical Transfer Characteristics
10
10 V
Pulse Test
6V
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
16
4V
8
12
6
3.5 V
8
4
3V
4
V
GS
= 2.5 V
2
T
C
= 75
°
C
25
°
C
–25
°
C
2
3
4
5
0
4
8
12
16
20
0
1
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.5
2.0
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
10 A
Pulse Test
2
1
0.5
V
GS
= 4 V
10 V
1.5
5A
1.0
0.2
0.1
0.05
0.5
0.5
I
D
= 2 A
0
2
4
6
8
10
1
2
5
10
20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6