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2SK1306 参数 Datasheet PDF下载

2SK1306图片预览
型号: 2SK1306
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET [Silicon N Channel MOS FET]
分类和应用:
文件页数/大小: 7 页 / 83 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK1306
Main Characteristics
Power vs. Temperature Derating
60
100
30
10
3
1.0
0.3
Ta = 25°C
0.1
0
50
100
150
1
3
10
30
100
300
1,000
D
Maximum Safe Operation Area
10
µ
s
Channel Dissipation Pch (W)
Drain Current I
D
(A)
PW
C
O
pe
10
=
0
1
10
m
m
s
µ
s
40
s
sh
ra
(1
tio
n
ot
20
(T
)
C
=
Operation in this Area
is Limited by R
DS (on)
25
°
C
)
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
Typical Transfer Characteristics
20
10 V
4V
7V
Pulse Test
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
12
Drain Current I
D
(A)
16
3.5 V
16
12
3V
8
8
75
°
C
T
C
= 25
°
C
–25
°
C
4
2.5 V
V
GS
= 2.5 V
4
0
4
8
12
16
20
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
V
DS (on)
(V)
2.5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
20 A
2.0
V
GS
= 4 V
10 V
1.5
Pulse Test
10 A
0.1
0.05
1.0
I
D
= 5 A
0.02
Pulse Test
0.5
0.01
0.005
1
2
5
10
20
50
100
0
2
4
6
8
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6