2SK1402, 2SK1402A
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
10
10
VDS = 20 V
TC = –25°C
VGS = 10 V
Pulse Test
Pulse Test
25°C
5
2
75°C
8
6
4
2
ID = 5 A
1
2 A
1 A
0.5
0.2
0.1
0
–40
0
40
80
120
160
0.05 0.1 0.2
0.5
1
2
5
Case Temperature TC (°C)
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1,000
500
1,000
Ciss
200
100
50
100
10
0
Coss
Crss
40
di/dt = 100 A/µs, VGS = 0
Ta = 25°C
20
10
VGS = 0
f = 1 MHz
0
10
20
30
50
0.05 0.1 0.2
0.5
1
2
5
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDD = 100 V
Switching Characteristics
500
20
1,000
800
600
400
200
0
VGS = 10 V, PW = 2 µs
.
<
duty 1%, V
=
=
30 V
.
DD
250 V
400 V
200
100
50
16
12
td (off)
VGS
VDS
tf
8
4
0
ID = 4 A
20
10
5
VDD = 400 V
250 V
100 V
tr
td (on)
0
8
16
24
32
40
0.1 0.2
0.5
1
2
5
10
Reverse Drain Current ID (A)
Gate Charge Qg (nc)
Rev.2.00 Sep 07, 2005 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
