2SK1566, 2SK1567
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at T
C
= 25
°
C
2SK1566
2SK1567
V
GSS
I
D
I
D(pulse)
*
I
DR
2
Pch*
Tch
Tstg
1
Symbol
V
DSS
Ratings
450
500
±30
7
28
7
35
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
2SK1566
2SK1567
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
450
500
±30
—
—
2.0
—
—
4.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.6
0.7
6.5
1050
280
40
15
55
95
40
0.95
320
Max
—
—
±10
250
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
3
I
D
= 4 A, V
GS
= 10 V *
I
D
= 4 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 4 A, V
GS
= 10 V,
R
L
= 7.5
Ω
3
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain
current
2SK1566
2SK1567
Gate to source cutoff voltage
Static drain to source on 2SK1566
state resistance
2SK1567
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
