2SK1697
Static Drain to Source on State
Resistance vs. Temperature
5
Pulse Test
4
I
D
= 0.5 A 0.2 A
3
V
GS
= 4 V
2
0.2 A
0.1 A
0.1 A
0.5 A
10 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
5
V
DS
= 10 V
Pulse Test
2
1
0.5
25°C
–25°C
0.2
0.1
0.05
0.02
T
C
= 75°C
1
0
–40
0
40
80
120
160
0.05 0.1
0.2
0.5
1
2
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1,000
100
di/dt = 50 A/µs
V
GS
= 0, Ta = 25°C
Pulse Test
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
Ciss
Capacitance C (pF)
200
100
50
10
Coss
Crss
1
20
10
0.05
0.1
0.1
0.2
0.5
1
2
5
0
V
GS
= 0
f = 1 MHz
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
100
20
Switching Characteristics
Gate to Source Voltage V
GS
(V)
100
50
20
10
5
2
1
0.05
t
r
t
d (on)
V
GS
= 10 V, PW = 2
µs
.
duty < 1%, V
DD
= 30 V
.
t
d (off)
Drain to Source Voltage V
DS
(V)
Switching Time t (ns)
80
V
DD
= 10 V
25 V
50 V
V
DS
V
GS
16
t
f
60
12
40
8
20
0
0
V
DD
= 50 V
25 V
10 V
0.8
1.6
I
D
= 0.3 A
4
0
2.4
3.2
4.0
0.1
0.2
0.5
1
2
5
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 May 11, 2006 page 4 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
