2SK1773
Absolute Maximum Ratings
(Ta = 25°C)
Unit
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
1000
V
V
±30
5
A
*1
Drain peak current
ID(pulse)
15
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch*2
Tch
5
100
A
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
1000
±30
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 800 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 3 A, VGS = 10 V*3
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
V(BR)GSS
IGSS
—
—
V
—
±10
250
3.0
2.0
µA
µA
V
IDSS
—
—
VGS(off)
RDS(on)
2.0
—
—
Static drain to source on state
resistance
1.5
Ω
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
td(on)
tr
3.2
—
—
—
—
—
—
—
—
—
5.0
1700
700
315
25
—
—
—
—
—
—
—
—
—
—
S
ID = 3 A, VDS = 20 V*3
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 3 A, VGS = 10 V,
RL = 10 Ω
110
210
135
0.85
1050
Turn-off delay time
Fall time
td(off)
tf
Body to drain diode forward voltage
VDF
trr
IF = 5 A, VGS = 0
Body to drain diode reverse
recovery time
ns
IF = 5 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse Test
Rev.2.00 Sep 07, 2005 page 2 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
