2SK2596
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Input capacitance
Output capacitance
Output Power
Drain Efficiency
Symbol
I
DSS
I
GSS
V
GS(off)
Ciss
Coss
Pout
ηD
Min.
—
—
0.4
—
—
30.2
45
Typ
—
—
—
22
10.5
31.46
55
Max.
10
±5.0
1.1
—
—
—
—
Unit
µA
µA
V
pF
pF
dBm
%
Test Conditions
V
DS
= 12 V, V
GS
= 0
V
GS
= ±10 V, V
DS
= 0
I
D
= 2 mA, V
DS
= 12 V
V
GS
= 5 V, V
DS
= 0, f = 1 MHz
V
DS
= 12 V, V
GS
= 0, f = 1 MHz
V
DS
= 12 V, f = 836.5 MHz
Pin = 18 dBm
V
DS
= 12 V, Pout = 30.2 dBm
f = 836.5 MHz, Pin = 18 dBm
Main Characteristics
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
3.0
Pulse test
2.5
3
Pch (W)
4
10
V
8V
(A)
Channel Power Dissipation
2.0
6V
5V
4V
3V
1
Drain Current
2
I
D
1.5
1.0
0.5
V
GS
= 2 V
0
50
100
150
Tc (°C)
200
0
2
4
6
8
(V)
10
Case Temperature
Drain to Source Voltage V
DS
Forward Transfer Admittance
vs. Drain Current
Typical Transfer Characteristics
1.0
1.0
Forward Transfer Admittance |yfs| (S)
(A)
0.8
Tc = -25°C
25°C
75°C
0.5
Tc = -25°C
25°C
I
D
0.2
0.1
75°C
0.6
Drain Current
0.4
0.05
0.2
V
DS
= 12 V
Pulse Test
1
2
3
4
V
GS
(V)
5
0.02
V
DS
= 12 V
Pulse Test
0.05
0.1
0.2
0.5
1
0
0.01
0.01 0.02
Gate to Source Voltage
Drain Current I
D
(A)
Rev.3.00, Feb.14.2005, page 2 of 4
RENESAS [ RENESAS TECHNOLOGY CORP ]
