2SK3000
Silicon N Channel MOS FET
Low Frequency Power Switching
REJ03G0379-0300Z
(Previous ADE-208-585A (Z))
Rev.3.00
Jun.15.2004
Features
•
Low on-resistance
R
DS(on)
= 0.16
Ω
typ. (V
GS
= 10 V, I
D
= 450 mA)
•
4 V gate drive devices.
•
Small package (MPAK)
•
Expansive drain to source surge power capability
Outline
MPAK
D
3
3
2
G
1
1
1. Source
2. Gate
3. Drain
2
S
Note: Marking is “ZY–”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
Ratings
40
±10
1.0
4.0
1.0
400
150
–55 to +150
Unit
V
V
A
A
A
mW
°C
°C
Channel dissipation
Pch
Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
t
2. When using the glass epoxy board (10 mm x 10 mm x 1 mm )
Rev.3.00, Jun.16.2004, page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
