MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
20
16
12
8
T
C
h = 25°C
V
GS = 0V
ID = 7A
Pulse Test
TC = 125°C
75°C
25°C
V
DS = 100V
200V
400V
4
4
0
0
0
20
40
60
80
(nC)
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Q
g
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
GS = 10V
= 3.5A
Pulse Test
VDS = 10V
= 1mA
ID
ID
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
I
GS = 0V
D = 1mA
D = 1.0
3
2
0.5
0.2
100
7
5
0.1
0.05
3
2
P
DM
10–1
tw
7
5
T
0.02
0.01
Single Pulse
tw
D
=
3
2
T
10–2
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Sep. 2001
RENESAS [ RENESAS TECHNOLOGY CORP ]
