MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
–10
Tch = 25°C
I
D
= –8A
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–40
SOURCE CURRENT I
S
(A)
V
GS
= 0V
Pulse Test
–8
V
DS
=
–25V
–20V
–10V
–32
Tc = 25°C
75°C
125°C
–6
–24
–4
–16
–2
–8
0
0
20
40
60
80
100
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
7
5
3
2
V
GS
= –10V
I
D
= –8A
Pulse Test
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–2.0
V
DS
= –10V
I
D
= –1mA
–1.6
–1.2
10
0
7
5
3
2
–0.8
–0.4
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch – a)
(°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= –1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5 D = 1.0
3
0.5
2
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.1
0.05
P
DM
0.02
0.01
Single Pulse
tw
T
D
=
tw
T
1.2
10
1
1.0
10
0
0.8
0.6
10
–1
0.4
–50
0
50
100
150
10
–2
10
–4
2 3 57
10
–3
23 57
10
–2
23 57
10
–1
2 3 57
10
0
2 3 57
10
1
2 3 57
10
2
2 3 57
10
3
PULSE WIDTH t
w
(s)
Sep.1998
CHANNEL TEMPERATURE Tch (°C)
RENESAS [ RENESAS TECHNOLOGY CORP ]
