HAT2132H
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0177-0300
Rev.3.00
Dec 07, 2006
Features
•
Low drive current.
•
Low on-resistance
•
Low profile
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK )
5
D
5
4
4
G
3
12
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
DR(pulse) Note1
I
AP Note3
E
AR Note3
Pch
Note2
θch-c
Tch
Tstg
Note1
Ratings
200
±30
6
24
6
24
6
2.4
20
6.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.3.00 Dec 07, 2006 page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
