HAT2200WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1678-0300
Rev.3.00
May 27, 2008
Features
•
•
•
•
Capable of 8 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 22 mΩ typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR Note 2
Pch
Note3
θch-c
Note3
Tch
Tstg
Note 2
Note1
Ratings
100
±20
20
80
20
20
40
20
6.25
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1678-0300 Rev.3.00 May 27, 2008
Page 1 of 7
RENESAS [ RENESAS TECHNOLOGY CORP ]
