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M5M51008DVP-55H 参数 Datasheet PDF下载

M5M51008DVP-55H图片预览
型号: M5M51008DVP-55H
PDF下载: 下载PDF文件 查看货源
内容描述: 1048576 - BIT ( 131072 -字×8位)的CMOS静态RAM [1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 119 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Ver. 1.1  
MITSUBISHI LSIs  
M5M51008DFP,VP,RV,KV,KR -55H, -70H  
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM  
Write cycle ( S1 control mode)  
tCW  
A0~16  
tsu (A)  
trec (W)  
tsu (S1)  
S1  
S2  
(Note 5)  
(Note 5)  
(Note 5)  
(Note 7)  
W
(Note 6)  
(Note 5)  
th (D)  
tsu (D)  
DATA IN  
STABLE  
DQ1~8  
Write cycle (S2 control mode)  
tCW  
A0~16  
S1  
(Note 5)  
(Note 5)  
tsu (A)  
tsu (S2)  
trec (W)  
S2  
W
(Note 7)  
(Note 6)  
(Note 5)  
(Note 5)  
tsu (D)  
th (D)  
DATA IN  
STABLE  
DQ1~8  
Note 5: Hatching indicates the state is "don't care".  
6: Writing is executed while S2 high overlaps S1 and W low.  
7: When the falling edge of W is simultaneously or prior to the falling edge of S1  
or rising edge of S2, the outputs are maintained in the high impedance state.  
8: Don't apply inverted phase signal externally when DQ pin is output mode.  
6