PS2525-1,PS2525L-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
200
150
100
50
150
100
50
1.5 mW/°C
2.5 mW/°C
0
25
50
75
100
(°C)
125
0
25
50
75
100
(°C)
125
Ambient Temperature T
A
Ambient Temperature T
A
FORWARD CURRENT vs.
FORWARD VOLTAGE
FORWARD CURRENT vs.
FORWARD VOLTAGE
150
100
50
100
10
T
A
= +100°C
+75°C
+50°C
+25°C
0°C
0
1
–25°C
–55°C
–50
–100
–150
0.1
0.01
0.4
0.6
0.8
1.0
1.2
(V)
1.4
1.6
–1.5
–1.0
–0.5
0.0
0.5
(V)
1.0
1.5
Forward Voltage V
F
Forward Voltage V
F
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10 000
50
IF
= 50 mA
10
5
1 000
100
10
5 mA
2 mA
1 mA
V
CE = 80 V
1
40 V
24 V
0.5
0.1
10 V
5 V
1
0.05
0.01
0.1
–60 –40 –20
0
20
40
60 80 100
0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(°C)
Collector Saturation Voltage VCE (sat) (V)
Remark The graphs indicate nominal characteristics.
6
Data Sheet PN10231EJ04V0DS
RENESAS [ RENESAS TECHNOLOGY CORP ]
