Preliminary
Data Sheet
QN7002
N-CHANNEL MOSFET FOR SWITCHING
Description
R07DS0269EJ0100
Rev.1.00
Mar 11, 2011
The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
•
Directly driven by a 4.5 V power source.
•
Low on-state resistance
R
DS(on)1
= 2.7
Ω
MAX. (V
GS
= 10 V, I
D
= 100 mA)
R
DS(on)2
= 3.2
Ω
MAX. (V
GS
= 4.5 V, I
D
= 50 mA)
Ordering Information
Part Number
QN7002-T1B-AT
Lead Plating
Pure Sn
Packing
3000p/Reel
Package
SC-59 (Mini Mold)
Remark
"-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Remark for Agent
ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT”
Absolute Maximum Ratings (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
60
±20
200
±800
200
150
−55
to
+150
V
V
mA
mA
mW
°C
°C
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10
μ
s, Duty Cycle
≤
1%
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
±400
V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
Page 1 of 6
RENESAS [ RENESAS TECHNOLOGY CORP ]
