Variable Gain
Amplifier
Product Features
• Multi-chip hybrid module
• MESFET&HBT chip on board
• 2 stage Gain Block amplifier
Which includes a digital attenuator
• 6-bit RF digital step attenuator covering
a 31.5dB attenuation range in 0.5dB steps
• Module system simplification
• No External Matching Circuit Needed
• Cutom Design Available
• Alumina Substrate
• Pb Free / RoHS Compliant
2AM Series
Application
• Repeater
• Base Station
• RF Sub-Systems
• IMT, WCDMA, UMTS,
Wimax, Wibro
Package : CP-5CS
Description
Variable Gain Amplifier 2AM Series can be used in any applications that need Gain Control according to Input Signal Level.
Also, 2AM Series can be applied to various frequency system combined with GaAs MESFET or InGaP HBT MMIC.
2AM series are a hybrid module which has 2-stage Amplifier chip and Attenuator chip mounted on a Ceramic board.
Attenuator is 0.5dB step 6-bit digital attenuator which has 31.5dB of total attenuation.
Original version use GaAs MESFET amplifiers but RFHIC can customize the amplifier IC used in the hybrid to be
either HBT, E-pHEMT or any other technology depending on specification requirements.
Electrical Specifications
Part
Number
2AM0405S
2AM0905S
2AM2105S
2AM0921S
2AM2121S
Frequency
(MHz)
50~200
824~960
1920~2170
400~1500
1700~2300
Gain
(dB)
28
25
17
25.5
22
NF
(dB)
3
3
3
6
6
P1dB
(dBm)
21
21
21
21
21
OIP3
(dBm)
39
39
39
39
39
Vd
(V)
5
5
5
5
5
Id
(mA)
240
240
240
190
190
* 50Ω RF Digital Attenuator insertion. 6-bit Flexible serial programming interfaces
Absolute Maximum Ratings
PARAMETER
Operating Case Temperature (℃)
Storage Temperature (℃)
Supply Voltage (V)
Rating
-40 ~ +85
-40 ~ +150
+6
Remark
Functional Diagram
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Tel : 82-31-250-5011
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rfsales@rfhic.com
Page 1/9
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All specifications may change without notice.
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Version 1.2