E-pHEMT
Product Features
• 500 ~ 4000MHz
• GaAs E-pHEMT
• 37dBm Output IP3
• 20dB Gain at 900MHz
• 24dBm P1 dB
• Single +5V Supply
• Pb Free / RoHS Standard
AE616
Application
• Cellular, PCS, W-CDMA Systems
• High Linearity Drive Amplifier
Package Type: SOT-89
Description
AE616 is a drive or pre-drive amplifier designed with GaAs E-pHEMT in a low cost SOT-89 package.
This E-pHEMT amplifier is designed as driver devices for infrastructure equipment in the 500~4000MHz Wireless technologies
such as cellular, GSM, PCS, CDMA, W-CDMA, Wibro, Wimax.
Specifications
PARAMETER
Frequency Range
Gain (S
21
)
Input Return Loss (S
11
)
Output Return Loss (S
22
)
Output 3
rd
Order Intercept Point (OIP3)
Output 1dB compression Point (P
1
dB)
Noise Figure
DC Operating Current
Operating Gate Voltage(
Vds=5V, Ids=85mA)
Threshold voltage
Units
MHz
dB
dB
dB
dBm
dBm
dB
mA
V
V
Min
Typ
500-4000
20
Max
10
10
35
22
12
12
37
24
2.7
3.4
100
70
85
0.4
0.1
0.25
0.4
Test Condition
①
880MHz, Vds=5V, Ids=85mA at 25℃
②
OIP3 is measured with two tones, at an output power of +10dBm/tone separated by 1MHz..
Absolute Maximum Ratings
PARAMETER
Operating Case Temperature (℃)
Storage Temperature (℃)
Drain-Source Voltage
Drain Current
Gate-Source Voltage
Channel Temperature
RF Input Power
Rating
-40 ~ 85
-50 ~ 125
+7V
250mA
-5V ~ 1V
150℃
25dBm
Remark
▪
Tel : 82-31-250-5011
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 1.4
RFHIC [ RFHIC ]
