Power Amplifier
Product Features
• Small size by using simple matching circuit board
• High Efficiency
• Single Supply Voltage
• High Linearity, 10W Power
• Heat sink 99.9% copper, gold plate
• High Productivity
• Low Manufacturing Cost
• GaAs MESFET
RFM2140-10
Application
•
UMTS Repeater
•
RF Sub-Systems
•
Base Station
Package : DP-36
Description
The power amplifier module is designed for base stations and cell extenders
as cellular and GSM , IMT-2000, ISM, MMDS frequency systems.
GaAs MESFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs MESFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Specifications
PARAMETER
Frequency Range (MHz)
Small Signal Gain (dB)
Gain Flatness (Max.)
Gain Variation Over Temp
VSWR (Input)
Output P1dB
W-CDMA Power (1 FA)
Vcc / Idc (CDMA Only)
OIP3 @ tone / 27 dBm
Noise Figure (Typ.)
Shut Down (On/Off)
In/Out Connectors
49 dBm
37 dBm
Min
Typ
2110 ~ 2170
11.5
± 0.5dB @ 50MHz BW
± 0.5dB
2:1
38 dBm
28 dBm
9V / 1.2A
50 dBm
5 dB
＋5V
@ 25㎂ / 0V
SMA Female (50
Ω)
-20°C ~ +70°C
± 1.0dB
Max
Dimensions in mm
Operating Temp Range
Dimensions (W×L×H)
Functional Diagram
29.0 × 30.2 × 9.0 [mm] (RFM)
48.0 × 54.2 × 22.0 [mm] (RFH)
NOTE
* W-CDMA : : 2140MHz, 3GPP W-CDMA signal modulation
Test Model 1, 64DPCH, 3.84MHz BW,
±
5MHz offset
* RFM : Internally Matched Module
* RFH : Housing Type
: RF Connector
: SMA Female
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Tel : 82-31-250-5011
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rfsales@rfhic.com
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All specifications may change without notice.
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Version 5.3
RFHIC [ RFHIC ]
