Power Amplifier
Product Features
• Small size by using simple matching circuit board
• Single Supply Voltage
• Heat sink 99.9% copper, gold plated
• High Productivity
• Low Manufacturing Cost
• GaAs HFET
RFW2140-10
Application
•
UMTS Repeater
•
RF Sub-Systems
•
Base Station
Package : DP-56
Description
The power amplifier module is designed for base stations and cell extenders and
operating frequency range is from 300MHz to 2.3GHz
GaAs HFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Specifications
PARAMETER
Frequency Range (MHz)
Small Signal Gain (dB)
Gain Flatness (Max.)
Gain Variation Over Temp
Output Return Loss
Output P1dB
W-CDMA Power (1 FA)
OIP3 @ tone / 27 dBm
Noise Figure (Typ.)
Drain Voltage
Drain
mm
Dimensions in
Current
Operating Temp Range
Dimensions (W×L×H)
NOTE
*Test condition: 2140MHz, 3GPP W-CDMA signal modulation
Test Model 1, 64DPCH, 3.84MHz BW,
±
5MHz offset
* RFW Series : Internally Matched Module
Min
Typ
2110 ~ 2170
24.5
± 0.5dB @ 50MHz BW
± 0.7dB
-15dB
Max
± 1.5dB
35 dBm
36 dBm
29dBm @ -45dBc ACLR
50 dBm
51 dBm
4 dB
10V
1.5A
Functional Diagram
-20°C ~ +70°C
32.0 × 44.0 × 10.0 [mm]
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Tel : 82-31-250-5011
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rfsales@rfhic.com
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All specifications may change without notice.
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Version 1.2
RFHIC [ RFHIC ]
