Power Transistor
Product Features
• High Output Power
P1dB = 40dBm(typ)@2.3GHz
• High Efficiency
• High Power Gain
G1dB = 10dB(typ) @2.3GHz
• High Linearity
• Hermetically sealed package
• Competitive Price
RT550PD
Application
• Repeater
• RF Sub-Systems
• Base Station
• Converter
• MMDS
Package Type : WP-22
Description
The RT550PD is designed for base stations and cell extenders as 300MHz ~ 3GHz.
Absolute Maximum Ratings
Parameter
Drain - Source Voltage
Gate - Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
Vds
Vgs
Pt
Tstg
Tch
Rating
+12
-5V~0V
37
-65 ~ +200
175
Unit
V
V
W
℃
℃
Electrical Characteristics (Ta=+25
℃
)
Parameter
Saturated Drain Current
Transconductance
Pinch-off Voltage
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
Output Power @ 1dB G.C.P
Linear Power Gain
Power added efficiency @ 1dB
Thermal Resistance (Channel to Case)
Symbol
Idss
gm
Vp
Bvgs
Bvgd
P1dB
G
LP
ηadd
Rth
Test Conditions
Vds=3V, Vgs=0V
Vds=3V, Ids=3600mA
Vds=3v, Ids=360mA
Min
5000
Typ
3300
Max
6700
Unit
mA
mS
-1.6
-20
-20
-1.9
-3.5
-25
-25
V
V
V
dBm
dB
%
Vds=9V, Id=2.4A
F=2.3GHz
39
40
10
40
4.0
4.5
℃/W
▪
Tel : 82-31-250-5011
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 5.2
RFHIC [ RFHIC ]
