Preliminary
GaN Power Amp Pallet
Product Features
• Doherty amplifier design
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 52.5W typical P
AVG
RTP07050-10
Application
• LTE application
Description
The RTP07050-10 is designed for RF system application frequencies from 746MHz to 780MHz, with high gain.
This Pallet Amplifier uses GaN on Sic HEMT technology which performs high breakdown voltage, high linearity, and high efficiency.
The RTP07050-10 is a LTE DPD application amplifier.
Electrical Specifications @ VDD= 31V, 50Ω System
PARAMETER
Frequency Range
Operating Bandwidth within BW
Average Output Power
Peak Output Power
ACLR (LTE 1FA 10MHz)
@ Po=+47.2dBm Avg.
RF Gain @ 25℃
Gain Flatness
Input Return Loss
Output Return Loss
Normal Operating Voltage
Current Consumption
Efficiency
Feedback Output level @ 47.2dBm
Temp Detector
Symbol
BW
OBW
Pout
Psat
Pre-DPD
ACLR
Post-DPD
G
ΔG
S11
S22
VDC
IDD
Eff
FB
T
Specification
746 ~ 780MHz
5 ~ 34MHz
47.2dBm(52.5W) Avg. @ LTE 1FA 10MHz
55.2dBm (Min. Duty Cycle 10% Pulse)
-27dBc(Min) @ ±10MHz
-50dBc(Min) @ ±10MHz
57dB (Min.)
2.0 dB(Peak to peak) @ Operating Frequency
-12dB (Min.)
-17dB (Min.)
+5.6V & +31V
0.3A @ 5.6V (Max.)
4.2A @ 31V (Typ.)
40% @ 31V (Typ.)
+5dBm ± 1.5dBm
0.9V @ 40℃(LM50)
@-30 ~ +65°C
@ 31V
@ CFR 7.5dB
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Tel : 82-31-250-5078
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rfsales@rfhic.com
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All specifications may change without notice.
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Version 1.1
RFHIC [ RFHIC ]
