Preliminary
GaN-SiC Pallet Amplifier
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 50W typical P
AVG
RTP18050-S1
Application
• CDMA & LTE DPD amplifier
• General purpose RF amplifier
Description
The RTP18050-S1 is designed for RF system application frequencies from 1830MHz to 1860MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP18050-S1 is a CDMA & LTE DPD application amplifier.
Electrical Specifications @ VDD=+31VDC, T=25°C, 50Ω
System
PARAMETER
Frequency Range
Output Power
Output Power @ Psat G.C.P
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
ACLR @ LTE 10MHz 1FA
ACLR with DPD
Forward Coupling
Operating Voltage
Efficiency @ Pout 50Watt
Symbol
BW
P
AVG
P
sat
SSG
ΔG
ΔGt
ACLR
ACLR
FC
VDC
E
Min
1830
-
-
50
-
Typ
-
47
55.5
55
± 1.0
± 3.0
Max
1860
Unit
MHz
dBm
-
-
±2
dBm
dB
dB
dB
dBc
dBc
-30
-33
-59
-39
-38
31
-37
-
-
dB
Volt
%
-
42
※
Test Signal Condition : LTE 10MHz 1FA (PAR 7.5dB), Test DPD solution : Optichron DPD
Environmental Characteristics
PARAMETER
Operating Temperature
Storage Temperature
Symbol
T
c
Ts
Min
-30
-40
Typ
-
-
Max
+60
+90
Unit
°C
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
Weight
RF Connectors In/Out/Coupling
DC Connectors / Controls
Cooling
Value
140 x 170 x 20
695
SMA Female/SMA Female/SMA Female
5569-08(8pin), 5267-03A(3pin)
External Heat sink + airflow
Units
mm
g
Limits
Max
Typical
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Tel : 82-31-250-5078
▪
rfsales@rfhic.com
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All specifications may change without notice.
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Version 0.1
RFHIC [ RFHIC ]
