Preliminary
GaN-SiC Pallet Amplifier
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 25W typical P
AVG
RTP21025-10
Application
• WCDMA & LTE DPD amplifier
• General purpose RF amplifier
Description
The RTP21025-10 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP21025-10 is DPD application amplifier.
Electrical Specifications @ VDD=+28VDC, T=25°C, 50Ω
System
PARAMETER
Frequency Range
Output Power
Output Power @ Psat G.C.P
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
ACLR @ WCDMA 20MHz 4FA
ACLR with DPD
Forward Coupling
Operating Voltage
Efficiency @ Pout 25Watt(
PAR 7.5dB)
Symbol
BW
P
AVG
P
sat
SSG
ΔG
ΔGt
ACLR
ACLR
FC
VDC
E
Min
2110
-
-
55
-
Typ
-
44
51.5
60
± 1.0
± 3.0
Max
2170
Unit
MHz
dBm
-
-
±2
dBm
dB
dB
dB
dBc
dBc
-23
-25
-53
-32
-31
28
-30
-
-
dB
Volt
%
-
38
※
Test Signal Condition : WCDMA 20MHz 4FA (PAR 7.5dB), Test DPD solution : Optichron DPD
Environmental Characteristics
PARAMETER
Operating Temperature
Storage Temperature
Symbol
T
c
Ts
Min
-30
-40
Typ
-
-
Max
+60
+90
Unit
°C
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
Weight
RF Connectors In/Out
RF Connector Coupling
DC Connectors / Controls
Cooling
▪
Tel : 82-31-250-5078
▪
rfsales@rfhic.com
Value
150 x 90 x 18.5
300
SMA Female
MCX Female
5569-08(8pin), 5267-03A(3pin)
External Heat sink + airflow
Units
mm
g
Limits
Max
Typical
▪
All specifications may change without notice.
▪
Version 0.6
RFHIC [ RFHIC ]
