GaN-SiC Pallet Amplifier
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance
matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 16 typical P
AVG
RTP23020-D1
Application
• WiMAX DPD amplifier
• General purpose RF amplifier
Description
RTP23020-D1 has been designed for RF system application frequencies from 2300MHz to 2400MHz, with high gain. This
DPD application Pallet Amplifier has been developed with GaN on SiC HEMT technology that has advantages of high
breakdown voltage, high linearity, and high efficiency.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
PARAMETER
Frequency Range
Output Power
Output Power @ Psat G.C.P
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
ACLR @ WiMAX 10MHz 2FA
Input VSWR
Forward Coupling
Operating Voltage
Efficiency @ Pout 10Watt
Symbol
BW
P
AVG
P
sat
SSG
ΔG
ΔGt
ACLR
S11
FC
VDC
E
Min
2300
-
-
-
-
Typ
-
16
75
55
± 1.0
± 2.0
-25dBr
Max
2400
-
-
-
± 1.5
Unit
MHz
Watt
Watt
dB
dB
dB
dBr
-
-
-
31
1.5:1
-30
30
33
1.7:1
-
-
-
dB
Volt
%
※
Test Signal Condition: WCDMA 4FA (PAR 8.0dB) or WiMAX 2FA (PAR 8.0dB)
Test DPD solution: TI DPD
Environmental Characteristics
PARAMETER
Operating Temperature
Storage Temperature
Symbol
T
c
Ts
Min
-20
-30
Typ
-
-
Max
+60
+90
Unit
°C
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
RF Connectors In/Out
RF Connector Coupling
DC Connectors / Controls
Cooling
Value
150 x 90 x 18.5
SMA Female
MCX Female
MDF7-10S-2.54DSA
External Heat sink + airflow
Units
mm
Limits
Max
▪
Tel : 82-31-250-5011
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 0.4
RFHIC [ RFHIC ]
