Preliminary
GaN-SiC Pallet Amplifier
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 70W typical P
AVG
RTP23070-20
Application
• LTE, WiMAX DPD amplifier
• General purpose RF amplifier
Description
The RTP23070-20 is designed for RF system application frequencies from 2300MHz to 2400MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP23070-20 is DPD application amplifier.
Electrical Specifications
@ VDD=+48VDC, T=25°C, 50Ω
System
PARAMETER
Frequency Range
Output Power
Instantaneous Bandwidth
Output Power @ Psat G.C.P
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
ACLR @ LTE 10MHz 1FA
※1
ACLR with DPD
Forward Coupling Level
Operating Voltage 1
Operating Voltage 2
Chain Efficiency
※2
@ Pout 77.6W
Pallet Efficiency @ Pout 70.8W
Input Port Return Loss
Output Port Return Loss
Symbol
BW
P
AVG
SBW
P
sat
SSG
ΔG
ΔGt
ACLR
ACLR
FC
VDC1
VDC2
EC
EP
IRL
ORL
Min
2300
-
Typ
-
48.5
20
Max
2400
Unit
MHz
dBm
30
-
-
± 1.0
MHz
dBm
dB
dB
dB
dBc
dBc
-
50
-
56.0
55
± 0.5
± 3.0
-25
-55
9
10
48
5.6
11
dBm
Volt
Volt
-
-
-13
-15
46
42
-18
-18
-
-
%
%
dB
dB
※1
Test Signal Condition: LTE 10MHz 1FA(PAR 7.5dB), Test DPD solution: Optichron DPD(OP6180)
※2
Chain Efficiency is an entire operating transistor efficiency excluded isolator and coupler.
Environmental Characteristics
PARAMETER
Operating Temperature
Storage Temperature
Symbol
T
c
Ts
Min
-40
-45
Typ
-
-
Max
+60
+90
Unit
°C
°C
▪
Tel : 82-31-250-5078
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 0.1
RFHIC [ RFHIC ]
