Preliminary
GaN-SiC Pallet Amplifier
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 30W typical P
AVG
, 2 path structure(2T)
RTP26030-22
Application
• LTE, WiMAX DPD amplifier
• General purpose RF amplifier
Description
The RTP26030-22 is designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP26030-22 is DPD application amplifier.
Electrical Specifications
@ VDD=+48VDC, T=25°C, 50Ω
System
PARAMETER
Frequency Range
Output Power
Instantaneous Bandwidth
Output Power @ Psat G.C.P
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
ACLR @ LTE 10MHz 1FA
※1
ACLR with DPD
Forward Coupling Level
Operating Voltage 1
Operating Voltage 2
TDD Operating Voltage
TDD Transition time
Chain Efficiency
※2
@ Pout 28.8W
Pallet Efficiency @ Pout 26.3W
Symbol
BW
P
AVG
SBW
P
sat
SSG
ΔG
ΔGt
ACLR
ACLR
FC
VDC1
VDC2
VTDD
STDD
EC
EP
Min
2496
-
Typ
-
44.6
20
Max
2690
Unit
MHz
dBm
30
-
-
± 1.5
MHz
dBm
dB
dB
dB
dBc
dBc
-
50
-
53.4
55
± 1.0
± 3.0
-20
-25
-50
9
10
48
5.6
5.0
0.8
11
dBm
Volt
Volt
Volt
1.2
-
-
uS
%
%
-
-
41
37
※1
Test Signal Condition: LTE 10MHz 1FA(PAR 7.5dB), Test DPD solution: Optichron DPD(OP6180)
※2
Chain Efficiency is an entire operating transistor efficiency excluded isolator and coupler.
Environmental Characteristics
PARAMETER
Operating Temperature
Storage Temperature
Symbol
T
c
Ts
Min
-40
-45
Typ
-
-
Max
+60
+90
Unit
°C
°C
▪
Tel : 82-31-250-5078
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 0.1
RFHIC [ RFHIC ]
