GaN-SiC Pallet Amplifier
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 8W typical P
AVG
RTP26010-S0
Application
• WiMAX DPD amplifier
• General purpose RF amplifier
Description
The RTP26010-S0 is designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP26010-S0 is DPD application amplifier.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
System
PARAMETER
Frequency Range
Output Power
Output Power @ Psat G.C.P
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
ACLR @ WiMAX 10MHz 2FA
Input VSWR
Forward Coupling
Operating Voltage
Efficiency @ Pout 10Watt
Symbol
BW
P
AVG
Psat
SSG
ΔG
ΔGt
ACLR
S11
FC
VDC
E
Min
2496
-
-
45
-
Typ
-
8
50
-
± 1.0
± 3.0
-25dBr
Max
2690
10
-
-
±2
Unit
MHz
Watt
Watt
dB
dB
dB
dBr
-
-
28
1.5:1
-30
30
30
1.7:1
-
-
-
dB
Volt
%
※
Test Signal Condition : WCDMA 4FA
Environmental Characteristics
PARAMETER
Operating Temperature
Storage Temperature
Symbol
T
c
Ts
Min
-20
-30
Typ
-
-
Max
+50
+60
Unit
°C
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
RF Connectors In/Out
RF Connector Coupling
DC Connectors / Controls
Cooling
Value
150 x 90 x 18.5
SMA Female
MCX Female
Main 4Pin, Sub 6Pin
External Heat sink + airflow
Units
mm
Limits
Max
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Tel : 82-31-250-5011
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
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Version 0.3
RFHIC [ RFHIC ]
