GaN-SiC Pallet Amplifier
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency
• 16W typical P
AVG
RTP26020-10
Application
• WiMAX DPD amplifier
• General purpose RF amplifier
Description
The RTP26020-10 is designed for RF system application frequencies from 2496MHz to 2690MHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP26020-10 is DPD application amplifier.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
System
PARAMETER
Frequency Range
Output Power
Output Power @ Psat G.C.P
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
ACLR @ WiMAX 10MHz 2FA
Input VSWR
Operating Voltage
Efficiency @ Pout 10Watt
Symbol
BW
P
AVG
Psat
SSG
ΔG
ΔGt
ACLR
S11
VDC
E
Min
2496
-
-
20
-
Typ
-
16
100
25
± 1.0
± 3.0
-25dBr
Max
2690
20
-
-
±2
Unit
MHz
Watt
Watt
dB
dB
dB
dBr
-
28
1.5:1
30
30
2.0:1
-
-
Volt
%
※
Test Signal Condition : WCDMA 4FA
Environmental Characteristics
PARAMETER
Operating Temperature
Storage Temperature
Symbol
T
c
Ts
Min
-20
-30
Typ
-
-
Max
+50
+60
Unit
°C
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
Cooling
Value
105 x 60 x 18.5
External Heat sink + airflow
Units
mm
Limits
Max
▪
Tel : 82-31-250-5011
▪
rfsales@rfhic.com
▪
All specifications may change without notice.
▪
Version 0.1
RFHIC [ RFHIC ]
