Preliminary
GaN-SiC Broadband Amplifier
Product Features
• Solid-state linear amplifier design
• GaN on SiC HEMT
• Small and light weight
• Wide Band Operation 500~2500MHz
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• Harsh environmental condition
• High efficiency
• 10W typical Psat
RUP15010-10
Application
• Broadband communication
• Broadcasting
• General purpose RF amplifier
• Linear applications in the L/S
Frequency Bands
Description
The RUP15010-10 is designed for RF system application frequencies from 500MHz to 2.5GHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide
bandwidth and high efficiency.
Electrical Specifications
@ VDD=+28VDC, T=25°C, 50Ω System
PARAMETER
Frequency Range
Output Power CW
Output Power @ P3dB G.C.P
Small Signal Gain
Small Signal Gain Flatness
Input VSWR
Harmonics @ P1dB G.C.P
Spurious Signals
Operating Voltage
Supply Current @ P
sat
Supply Current @ P
3dB
Symbol
BW
Psat
P
3dB
SSG
ΔG
S11
H
Spur
VDC
IDD
IDD
Min
500
Typ
Max
2500
Unit
MHz
Watt
Watt
dB
10
5
10
14
± 1.5
± 2.0
8.5 : 1
-10
-70
27
28
1.0
0.7
-60
30
1.5
1.0
dB
-
dBc
dBc
Volt
Amp
Amp
* Please DO NOT ENTER RF INPUT POWER OVER +37dBm. (to prevent the main from damaging)
Environmental Characteristics
PARAMETER
Operating Case Temperature
Storage Temperature
Symbol
T
c
Ts
Min
0
-40
Typ
Max
+70
+85
Unit
°C
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
RF Connectors In/Out
Cooling
▪
Tel : 82-31-250-5011
▪
rfsales@rfhic.com
Value
55.0 x 30.0 x 16.0
SMA Female
External Heat sink + airflow
Units
mm
Limits
Max
▪
All specifications may change without notice.
▪
Version 0.3
RFHIC [ RFHIC ]
