Preliminary
XVT9005
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Voltage Controlled Temperature Compensated Crystal Oscillator
Application: Wireless Communication Devices
Excellent Frequency Stability & Low Phase Noise
3.2 x 2.5 x 1.3 mm Surface-Mount Case
Complies with Directive 2002/95/EC (RoHS)
Pb
32 MHz
VCTCXO
SM3225-4 Case
Electrical Characteristics
Characteristic
Nominal Frequency
StorageTemperature Range
Operating Temperature Range
Power Supply Voltage
Output Voltage with Load 10 pF || 10 KΩ
Output Waveform
Power Supply Current
Control Voltage
Control Voltage Terminal Input Impedance
Frequency Tolerance after Reflow, Vcon = 1.5 V
Frequency Stability
Versus Temperature, -30 to +85 °C
Versus Supply Voltage, 2.8 V ±5%
Versus Load Variation, 10 pF || 10 KΩ ±10%
Aging
Frequency Control Range, Vcon = 1.4±1.0 V
Start Up Time, 90% of final RF level in Vp-p
Harmonics
SSB Phase Noise @ 10 kHz Carrier Offset
Stanard Shipping Quantity on 180 mm (7”) Reel
Lid Symbolization
-130 dBc/Hz max
1000
9005 // YWWS
units
±10
2.0
-5.0
±2.0
±0.3
±0.2
±1 ppm
ppm
ms
dBc
ppm
Icc
Vcon
100K
±1.0 ppm max @ 25 °C ±3 °C
1.4±1.0
Vcc
Vout
0.8
Clipped Sinewave
2.0
mA
V
ohms
Sym
Fo
Notes
Minimum
-55
-30
Typical
32.000000
Maximum
+125
+85
Units
MHz
°C
°C
V
Vp-p
2.8
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
The design, manufacturing process, and specifications of this device are subject to change without notice.
www.RFM.com E-mail: info@rfm.com
©2009-2010 by RF Monolithics, Inc.
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XVT9005 - 2/2/10
RFM [ RF MONOLITHICS, INC ]
