Preliminary
XVT9009
•
•
•
•
Voltage Controlled Temperature Compensated Crystal Oscillator
Excellent Frequency Stability & Low Phase Noise
7 x 5 x 2 mm Surface-Mount Case
Complies with Directive 2002/95/EC (RoHS)
Pb
20 MHz
VCTCXO
Electrical Characteristics
Characteristic
Nominal Frequency
Storage Temperature
Operating Temperature Range
Power Supply Voltage
Output Voltage with Load 10 pF||10 KΩ
Output Wave form
Power Supply Current
Control Voltage
Control Voltage Input Impedance
Frequency Tolerance, V
CONTROL
=1.65 V (as received)
Frequency Stability versus:
Temperature, -40 to 85 °C
Supply Voltage, 2.97 to 3.63 V
Load, 10 pF||10 KΩ ±10%
Control Voltage Frequency Range (1.65 ±1.0 V)
Start Up Time, 90% of final RF level in V
P-P
First Year Aging @ 25 °C
10 Year Aging @ 25 °C
Harmonics
SSB Phase Noise:
@ 1 kHz Carrier Offset
@ 10 kHz Carrier Offset
@ 100 kHz Carrier Offset
Stanard Shipping Quantity on 180 mm (7”) Reel
Lid Symbolization
Sym
Fo
Notes
Minimum
-55
-40
Typical
20.000000
Maximum
+125
+85
Units
MHz
°C
°C
V
V
P-P
V
DD
V
OUT
I
DD
V
CON
2.97
1.0
3.30
Sinewave
3.63
8.0
1.65 ±1.0
100K
±2.0 ppm maximum @ 25 °C ±3 °C
±0.5
±0.2
±0.2
±5
2.0
±1
±5
-5.0
-135
-145
-150
500
9009 // YWWS
mA
V
ohms
ppm
ppm
ppm
ppm
ms
ppm
ppm
dBc
dBc/Hz
dBc/Hz
dBc/Hz
units
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
The design, manufacturing process, and specifications of this device are subject to change without notice.
www.RFM.com E-mail: info@rfm.com
©2009-2010 by RF Monolithics, Inc.
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XVT9009 - 2/2/10
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