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CGB-1089Z 参数 Datasheet PDF下载

CGB-1089Z图片预览
型号: CGB-1089Z
PDF下载: 下载PDF文件 查看货源
内容描述: 50MHz至1000MHz单的InGaP /砷化镓HBT MMIC放大器CATV截止 [50MHz to 1000MHz SINGLE ENDED InGaP/GaAs HBT MMIC CATV AMPLIFIER]
分类和应用: 放大器有线电视
文件页数/大小: 8 页 / 309 K
品牌: RFMD [ RF MICRO DEVICES ]
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CGB-1089Z
50Mhz to
1000MHz Sin-
gle Ended
InGaP/GaAs
HBT MMIC
CATV Amplifier
CGB-1089Z
50MHz to 1000MHz SINGLE ENDED
InGaP/GaAs HBT MMIC CATV AMPLIFIER
Product Description
RFMD’s CGB-1089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with a 75Ω active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 5V supply, the CGB-1089Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The CGB-1089Z product is designed for high linearity 5V gain
block applications that require small size and minimal external compo-
nents. It is internally matched to 75Ω.
Gain & Return Loss
Features
Flat Gain
Response:16dB±0.4dB
Excellent Return Loss:21dB
Low Distortion:-77/-65dBc
CTB/CSO
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Optimum Technology
Matching® Applied
18
10
Applications
CATV Network Amplifiers
CATV Drop Amplifiers
Optical Rx/Tx
FTTH Video Solutions
GaAs HBT
GaAs MESFET
InGaP HBT
Gain dB
B
16
5
14
0
12
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
-5
db(S11)
10
db(S22)
-10
8
-15
6
-20
4
2
-25
0
50
150
250
350
450
550
650
750
850
950
-30
Frequency MHz
Parameter
Min.
Specification
Typ.
Max.
Unit
Return Loss dB
L
db(S21)
Condition
Small Signal Gain
14.5
16.0
17.5
dB
500MHz
Output Power at 1dB Compression
16.5
18.0
dBm
500MHz
Third Order Intercept Point
35.0
dBm
500MHz
Second Order Intercept Point
50.0
dBm
500MHz
79Ch., Flat Tilt, 25dBmV,
-65.0
dBc
CSO
79Ch., Flat Tilt, 25dBmV
-77.0
dBc
CTB
79Ch., Flat Tilt, 25dBmV
76.0
dBc
XMOD
Worst Case Input Return Loss
18.0
19
dB
50MHz to 1000MHz
Worst Case Output Return Loss
14
15
dB
50MHz to 1000MHz
Noise Figure
3.5
4.0
dB
500MHz
Reverse Isolation,
19.0
dB
50MHz to 1000MHz
Thermal Resistance
48.8
°C/W
junction - lead
Device Operating Voltage
5.0
V
Device Operating Current
68.0
80.0
92.0
mA
Test Conditions: V
D
=5V, I
D
=80mA Typ., OIP
3
, OIP
2
Tone Spacing=6MHz, P
OUT
per tone=0dBm, T
L
=25°C, Z
S
=Z
L
=75Ω, Tested will App Circuit
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-104857 Rev D
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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