FPD7500.5 W
Power pHEMT
FPD750
0.5W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor
(pHEMT), featuring a 0.25μmx750μm Schottky barrier gate, defined by high -reso-
lution stepper-based photolithography. The double recessed gate structure mini-
mizes parasitics to optimize performance. The epitaxial structure and processing
have been optimized for reliable high-power applications. The FPD750 also fea-
tures Si
3
N
4
passivation and is available in the low-cost plastic SOT89, SOT343, and
DFN packages.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
27.5dBm Linear Output
Power at 12GHz
11.5dB Power Gain at 12GHz
14.5dB Max Stable Gain at
12GHz
38dBm O
IP3
50% Power-Added Efficiency
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Parameter
Electrical Specifications
P
1dB
Gain Compression
Maximum Stable Gain (S21/S12)
Power Gain at P
1dB
(G
1dB
)
Power-Added Efficiency (PAE)
OIP
3
Saturated Drain-Source Current (I
DSS
)
Maximum Drain-Source Current
(I
MAX
)
Transconductance (G
M
)
Gate-Source Leakage Current (I
GSO
)
Pinch-Off Voltage (V
P
)
Gate-Source Breakdown Voltage
(V
BDGS
)
Gate-Drain Breakdown Voltage
(V
BDGD
)
Thermal Resistivity (θJC)
Min.
26.5
13.5
10.5
Specification
Typ.
27.5
14.5
11.5
45
38
40
Max.
Unit
dBm
dB
dB
%
dBm
dBm
Condition
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
, P
OUT
=P
1dB
V
DS
=8V, I
DS
=50% I
DSS
Matched for optimal power, tuned for best IP
3
V
DS
=1.3V, V
GS
=0V
V
DS
=1.3V, V
GS
≈+1V
V
DS
=1.3V, V
GS
=0 V
VGS=-5V
V
DS
=1.3V, I
DS
=0.36mA
I
GS
=0.75mA
I
GD
=0.75mA
V
DS
>6V
185
230
370
200
10
|1.0|
280
mA
mA
ms
μA
V
V
V
°C/W
|12.0|
|14.5|
|14.0|
|16.0|
65
Note: T
AMBIENT
=22°C, RF specifications measured at f=12GHz using CW signal.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090609
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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