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NBB-300-D 参数 Datasheet PDF下载

NBB-300-D图片预览
型号: NBB-300-D
PDF下载: 下载PDF文件 查看货源
内容描述: 级联宽带的GaAs MMIC放大器直流到12GHz的 [CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz]
分类和应用: 放大器射频微波
文件页数/大小: 12 页 / 284 K
品牌: RFMD [ RF MICRO DEVICES ]
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NBB-300
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
RoHS Compliant & Pb-Free Product
Package Style: Micro-X, 4-Pin, Ceramic
Features
Reliable, Low-Cost HBT Design
12.0dB Gain, +13.8dBm
P1dB@2GHz
High P1dB of
+14.3dBm@6.0GHz and
+11.2dBm@14.0GHz
Single Power Supply Operation
50Ω I/O Matched for High Freq.
Use
RF IN 1
GND
4
MARKING - N3
3 RF OUT
Applications
Narrow and Broadband Commer-
cial and Military Radio Designs
Linear and Saturated Amplifiers
Gain Stage or Driver Amplifiers
for MWRadio/Optical Designs
(PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellu-
lar/DWDM)
2
GND
Functional Block Diagram
Product Description
The NBB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost,
high-performance solution for general purpose RF and microwave amplification
needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design,
providing unsurpassed performance for small-signal applications. Designed with an
external bias resistor, the NBB-300 provides flexibility and stability. The NBB-300 is
packaged in a low-cost, surface-mount ceramic package, providing ease of assem-
bly for high-volume tape-and-reel requirements. It is available in either packaged or
chip (NBB-300-D) form, where its gold metallization is ideal for hybrid circuit
designs.surface-mount ceramic package, providing ease of assembly for high-vol-
ume tape-and-reel requirements. It is available in either packaged or chip (NBB-
300-D) form, where its gold metallization is ideal for hybrid circuit designs.
Package Drawing
45°
0.055
(1.40)
UNITS:
Inches
(mm)
N3
0.040
(1.02)
0.070
(1.78)
Ordering Information
NBB-300
NBB-300-T1
NBB-300-D
NBB-300-E
NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz
Tape & Reel, 1000 Pieces
NBB-300 Chip Form (100 pieces minimum order)
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
0.020
0.200 sq.
(5.08)
0.005
(0.13)
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A11 DS070328
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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