RF2048
Absolute Maximum Ratings
Parameter
Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Preliminary
Rating
75
+15
-40 to +85
-60 to +150
Unit
mA
dBm
°C
°C
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Specification
Min.
Typ.
Max.
DC to 8000
12.2
12.1
11.8
11.5
11.3
11.0
10.2
±0.2
5.3
1.6:1
1.8:1
1.5:1
1.9:1
+26
+11.7
16.6
213
115
1.2x10
4
6.6x10
6
1.7x10
11
3.0
3.6
40
4.0
Unit
MHz
dB
dB
dB
dB
Condition
T=25 °C, V
D
=3.6V, I
CC
=40mA
Freq=100MHz
Freq=1000MHz
Freq=2000MHz
Freq=3000MHz
Freq=4000MHz
Freq=6000MHz
Freq=8000MHz
100MHz to 2000MHz
Freq=2000MHz
In a 50Ω system, DC to 3000MHz
In a 50Ω system, 3000MHz to 8000MHz
In a 50Ω system, DC to 3000MHz
In a 50Ω system, 3000MHz to 8000MHz
Freq=2000MHz±100kHz, P
TONE
=-5dBm
Freq=2000MHz
Freq=2000MHz
I
CC
=40mA, P
DISS
=137mW
4
GENERAL PURPOSE
AMPLIFIERS
Frequency Range
Gain
10
Gain Flatness
Noise Figure
Input VSWR
Output VSWR
Output IP
3
Output P
1dB
Reverse Isolation
dB
dB
dBm
dBm
dB
°C/W
°C
years
years
years
V
mA
Thermal
Theta
JC
Maximum junction temperature
Mean Time Between Failures
Mean Time Between Failures
Mean Time Between Failures
T
AMB
=+85°C
T
AMB
=+25°C
T
AMB
=-40°C
With 22Ω bias resistor
At pin 3 with I
CC
=40mA
Power Supply
Operating Device Voltage
Operating Current
4-32
Rev A5 010110
RFMD [ RF MICRO DEVICES ]
